Pressure dependence of the bandgap energy and the conduction-band mass for an n-type InGaAs/GaAs strained single-quantum-well

摘要

We report the measurement of the pressure dependence for the bandgap energy E(sub g) and conduction-band mass m(sub c) for an 80(angstrom)-wide n-type In(sub 0.20)Ga(sub 0.80)As/GaAs single strained quantum well at 4.2K for pressures between 0 and 35 kbar and fields up to 30 tesla.