SEMICONDUCTOR DEVICE AND ITS MANUFACTURE, POLISHING METHOD AND POLISHING MACHINE THEREOF, AND REGENERATION METHOD OF POLISHING SURFACE OF THE POLISHING MACHINE

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device of high yield and high reliability, which is capable of high accuracy planarization when protrusions and recesses exist on the surface of a semiconductor device. SOLUTION: A conducting film 203 is formed on a semiconductor substrate 201, and recess 215, 126 are formed by selectively eliminating the conductive film 203. An insulating film 217 is formed higher than at least the height of the recess 215, 216 on the conducting film 203 having the recess 215, 216. By the use of the conducting film 203 as a stopper, the insulating film 217 is polished and eliminated by the use of abrasive agent containing cerium oxide, so that the surfaces of the conducting film 203 and the insulating film 217 are flattened.