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ALIGNING METHOD, LITHOGRAPHIC SYSTEM USING THE METHOD AND METHOD FOR MANUFACTURING DEVICE USING THE ALIGNING METHOD

机译:指名方法,使用该方法的光刻系统以及使用该指名方法制造设备的方法

摘要

PROBLEM TO BE SOLVED: To provide a multiple aligning method, capable of obtaining image formation characteristic high respectively for a plurality of types of patterns, without causing sharp reduction in process speed even when a sensitive material necessary for shortening a deferment time of period is used. ;SOLUTION: Protective patterns 35, 36 for aligning each portion except the intrinsic patterns from reticle patterns 33R, 34R to be aligned are produced, and cyclic patterns 40, 37 are produced for prescribing a final form. Chemical amplifying type resist is first applied on a wafer of a first lot, and the protection patterns 35, 36 are aligned as patterns of a first reticle. Thereafter, the cyclic patterns 40, 37 as patterns for a second reticle with respect to a wafer of the one lot are aligned, and is developed immediately thereafter. After that, etching, etc., is performed to form circuit patterns.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:提供一种多重对准方法,即使使用缩短周期的延迟时间所需的敏感材料,也能够获得针对多种图案的较高的图像形成特性,而不会引起处理速度的急剧降低。 。解决方案:产生用于对准除了掩模版图案33R,34R的固有图案之外的要对准的每个部分的保护图案35、36,并且产生用于规定最终形式的循环图案40、37。首先将化学放大型抗蚀剂施加在第一批次的晶片上,并且将保护图案35、36对准为第一掩模版的图案。此后,将作为相对于一个批次的晶片的第二掩模版的图案的循环图案40、37对准,并在其后立即显影。之后,进行蚀刻等以形成电路图案。;版权所有:(C)1999,JPO

著录项

  • 公开/公告号JPH11176726A

    专利类型

  • 公开/公告日1999-07-02

    原文格式PDF

  • 申请/专利权人 NIKON CORP;

    申请/专利号JP19970338582

  • 发明设计人 HIRUKAWA SHIGERU;

    申请日1997-12-09

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-22 02:35:12

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