DEDUCTION OF OXYGEN DEPOSITION BEHAVIOR IN SILICON SINGLE CRYSTAL, DETERMINATION OF PRODUCTION PROCESS FOR SILICON SINGLE CRYSTAL WAFER AND RECORDING MEDIUM RECORDING PROGRAM FOR DEDUCING OXYGEN DEPOSITION BEHAVIOR IN SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method by which the oxygen deposition amount and internal defect density in silicon during or after heat treatment can simply and accurately be deduced in an ultrashort time by performing numeric calculation with a programmed computer when factors such as the initial oxygen concentration or heat-treating conditions are known. ;SOLUTION: This method comprises inputting the initial oxygen concentration in a silicon single crystal, the impurity concentration or resistivity in the single crystal and heat-treating conditions applied to the silicon single crystal and calculating the oxygen deposition amount and internal defect density in the silicon single crystal after the heat treatment in the method for deducing an oxygen deposition behavior in the silicon single crystal with a programmed computer. Each factor dependence is determined by the method and used to thereby determine the initial oxygen concentration, impurity concentration, resistivity and crystal thermal history of the silicon single crystal wafer to be used so as to provide a desired oxygen deposition amount and internal defect density during or after a specific wafer step.;COPYRIGHT: (C)1999,JPO