首页> 外国专利> PHASE SHIFT PHOTOMASK BLANK AND PRODUCTION OF PHASE SHIFT PHOTOMASK AS WELL AS METHOD FOR CONTROLLING SIDE ETCHING QUANTITY

PHASE SHIFT PHOTOMASK BLANK AND PRODUCTION OF PHASE SHIFT PHOTOMASK AS WELL AS METHOD FOR CONTROLLING SIDE ETCHING QUANTITY

机译:相移光电掩膜空白,相移光电掩膜的生产以及控制侧面蚀刻量的方法

摘要

PROBLEM TO BE SOLVED: To improve the sectional shape of the phase shift films of a phase shift photomask blank composed of single layer or multiple layers of the phase shift films and phase shift photomask and to improve the line width control of circuit patterns. ;SOLUTION: The phase shift photomask blank consisting of the single layer or multiple layers of the phase shift films and phase shift photomask are produced by sputtering a molybdenum silicide target by gases consisting of inert gas and reactive gases on a transparent substrate. At this time, the gases which are formed by adding oxygen, nitrogen or a mixture composed of the oxygen and the nitrogen to a nitrogen oxide and are adjusted in the addition ratios thereof are used as the reactive gases.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:改善由单层或多层相移膜和相移光掩模组成的相移光掩模坯料的相移膜的截面形状,并改善电路图案的线宽控制。 ;解决方案:由单层或多层相移膜和相移光掩模组成的相移光掩模坯料是通过在透明基板上用惰性气体和反应性气体组成的气体溅射硅化钼靶制成的。此时,将通过将氧,氮或由氧和氮组成的混合物添加到氮氧化物中而形成并调节其添加比例的气体用作反应性气体。版权所有:(C)1999 ,日本特许厅

著录项

  • 公开/公告号JPH11184063A

    专利类型

  • 公开/公告日1999-07-09

    原文格式PDF

  • 申请/专利权人 ULVAC SEIMAKU KK;

    申请/专利号JP19970357616

  • 发明设计人 YAMADA FUMIHIKO;KAWADA SUSUMU;AMANO JUN;

    申请日1997-12-25

  • 分类号G03F1/08;

  • 国家 JP

  • 入库时间 2022-08-22 02:33:53

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