SEMICONDUCTOR LIGHT-EMITTING ELEMENT, PRODUCTION OF THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND INDICATOR THEREOF

摘要

PROBLEM TO BE SOLVED: To effectively pick up light emitted from a light-emitting layer by providing a conductive layer between a pair of electrode leads and a P electrode, in such a manner as to connect to a P electrode a pair of electrode leads which are provided with a recessed part for a semiconductor chip whose surface which is a reflecting face of light-emitting from a light-emitting layer and are insulated/divided. ;SOLUTION: A recessed part 5 for a semiconductor chip is provided to a pair of electrode lead consisting of a P-electrode 1 and an N-electrode lead 2. For example, a semiconductor chip 3 which is provided with a light emitting layer formed by a P-N junction of P-type semiconductor layer made of a GaN and an N-type semiconductor layer is fitted to the recessed part. The P-type semiconductor layer is connected to the P electrode lead 1, while the N-type semiconductor layer is connected to the N-electrode lead 2. The joint part between the semiconductor chip 3 and the P-type electrode lead 1 and N electrode 2 is formed of visible optically transmissive epoxy resin, etc., and it is encapsulated with an encapsulating resin 4 which functions as a lens. A light emitted from the light-emitting layer is reflected on the surface of the recessed part, and it can be extracted effectively, because no wire bonding or thin film electrode blocking the light is provided.;COPYRIGHT: (C)1999,JPO