THIN-FILM TEMPERATURE SENSITIVE RESISTANCE MATERIAL, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a thin-film temperature sensitive resistance material and its manufacturing method which, excellent in sensitivity near room temperature, represents a high resistance temperature factor and a low specific resistance value near a room temperature at the same time. ;SOLUTION: Relating to the thin-film temperature sensitive resistance material, a temperature sensitive resistance part comprises a mixed crystal of oxide and nitride due to such transition metals as vanadium (MnxOy (0x1, 2≤y≤13/6) is preferred). Relating to its manufacturing method, a transition metal target is sputtered in an atmosphere gas comprising, as main component, nitrogen gas (preferably in a mixed atmosphere gas of nitrogen, argon, and oxygen, with a flow amount rate of nitrogen and oxygen (nitrogen/oxygen) 14/1-23/1), to form a mixed crystal of oxide and nitride due to transition metals.;COPYRIGHT: (C)1998,JPO