Method for production of semiconductor integrated circuit device provided with a high voltage transistor

摘要

A method for the production of a semiconductor integrated circuit device is disclosed, wherein the formation of lateral wall spacers for high voltage MOS transistor is implemented by forming a resist film (10) for covering at least an insulating film (9) formed on a drain region (6) of low impurity concentration in the proximity of a gate electrode (5A), masking the resist film (10), and etching the parts of the insulating film destined to give rise to the lateral wall spacers (12).