Semiconductor circuit device capable of reducing influence of a parasitic capacitor

摘要

In a semiconductor circuit device comprising a differential amplifier circuit, which is formed on a semiconductor substrate and which comprises first and second input terminals, and a circuit element formed on the semiconductor substrate and connected to one of the first and the second input terminals. A dummy circuit element is formed on the semiconductor substrate so as to adjoin the circuit element for forming between the dummy circuit element and the semiconductor substrate a dummy parasitic capacitor which is equivalent to a parasitic capacitor formed between the circuit element and the semiconductor substrate. The dummy circuit element is connected to the other one of the first and the second input terminals. Alternatively, a first resistor connected to the first input terminal is formed in a wiring layer so that its parasitic capacity is equivalent to the parasitic capacity of the feedback resistor.