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Multiple-valued memory and data access method for multiple-valued memory

机译:多值存储器和多值存储器的数据访问方法

摘要

A multiple-valued memory is capable of storing analog quantities which are distinguishable in a plurality of levels, and includes a plurality of memory cells capable of storing n-valued logic values depending on the stored analog quantities, where n is three or greater. The multiple-valued memory is constructed such that correspondences between the analog quantities to be stored by the memory cells and the logic values to be stored in the memory cells are set so that a Hamming distance between two logic values respectively corresponding to an analog quantity having an i-th level and an analog quantity having a (i+1)-th level is one.
机译:多值存储器能够存储在多个级别上可区分的模拟量,并且包括能够根据所存储的模拟量来存储n值逻辑值的多个存储单元,其中n为3或更大。构造多值存储器,使得设置要由存储单元存储的模拟量与要存储在存储单元中的逻辑值之间的对应关系,以使得分别对应于具有以下各项的模拟量的两个逻辑值之间的汉明距离第i级和具有第(i + 1)级的模拟量是1。

著录项

  • 公开/公告号EP0858076A3

    专利类型

  • 公开/公告日1999-05-19

    原文格式PDF

  • 申请/专利权人 FUJITSU LIMITED;

    申请/专利号EP19970307574

  • 申请日1997-09-26

  • 分类号G11C11/56;

  • 国家 EP

  • 入库时间 2022-08-22 02:19:45

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