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MULTIPLE-VALUED MEMORY AND DATA ACCESS METHOD FOR MULTIPLE-VALUED MEMORY

机译:多值存储器和多值存储器的数据访问方法

摘要

The present invention relates to a multi-value memory and a data access method for a multi-value memory, and to improve the reliability of read data by enabling highly reliable data error correction even if there is some problem in the threshold control method and data retention characteristics. The purpose.;It is possible to maintain an analog quantity which can be divided into a plurality of levels according to the size, and have a plurality of memory cells capable of storing three or more logical values according to the level of the analog quantity to be maintained, and the analog quantity of the i th level and the i + 1 th The analog amount held by the memory cell and the logic value stored in the memory cell correspond to each other so that the hamming distance between two logic values corresponding to each of the analog amounts of the level becomes one.
机译:本发明涉及一种多值存储器和用于多值存储器的数据访问方法,并且通过即使在阈值控制方法和数据中存在一些问题的情况下也能够通过进行高度可靠的数据纠错来提高读取数据的可靠性。保留特性。目的:可以维持根据大小可以分为多个级别的模拟量,并且可以具有多个存储单元,该存储单元能够根据模拟量的级别来存储三个或更多个逻辑值。保持,并且第i个电平和第i + 1个模拟量与存储单元所保持的模拟量和存储在存储单元中的逻辑值彼此对应,从而两个逻辑值之间的汉明距离对应于该级别的每个模拟量都变为1。

著录项

  • 公开/公告号KR100279233B1

    专利类型

  • 公开/公告日2001-01-15

    原文格式PDF

  • 申请/专利权人 후지쯔 가부시끼가이샤;

    申请/专利号KR19970052226

  • 发明设计人 하야시도모히로;

    申请日1997-10-13

  • 分类号G11C16/02;

  • 国家 KR

  • 入库时间 2022-08-22 01:12:33

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