Single transverse mode short wavelength surface emitting semiconductor laser device and manufacturing method

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gallium nitride (GaN) based light emitting semiconductor laser device, and in particular, an upper distributed Bragg reflector (DBR) 22 of a device is formed in the shape of a dome or a lens to polarize light. And a single transverse mode oscillation device that allows edge emitting devices to emit beams parallel to the stacking surface, whereas the surface emitting laser semiconductor beams are perpendicular to the stacking surface. ) Can be oscillated.;In the conventional surface light emitting diode, polarization is not fixed in a specific direction, but the present invention overcomes the above disadvantage by forming the upper DBR of the device in the shape of a lens.;The present invention also provides a method of manufacturing a single transverse mode short wavelength surface emitting semiconductor laser device as described above.;The manufacturing method of the present invention includes forming a convex lens-shaped PR pattern, applying heat to the pattern, and treating the device by dry etching.