A short-wavelength surface emitting semiconductor laser device having a dispersed Bragg reflector in which a gallium nitride layer and an air layer are repeatedly laminated, and a manufacturing method thereof

摘要

The present invention relates to a surface-emitting semiconductor laser device fabricated using a GaN-based Group III-V nitride and a method of manufacturing the same, and more particularly to a surface emitting semiconductor laser device fabricated by using a structure in which a dispersed Bragg reflector in which GaN and air are alternately stacked is adopted, A buffer layer made of AlN or GaN positioned on the substrate; a GaN layer disposed on the buffer layer; and a buffer layer formed on the GaN layer, And a lower dispersion Bragg grating in which a high refractive index layer composed of GaN or AlGaN containing a low amount of Al and a low refractive index layer containing GaN or a high content of Al and then Al is selectively etched by wet etching, A p-AlGaN layer and a n-AgaN layer serving as optical confinement above and below the active layer, A p-GaN contact layer, a n-GaN contact layer and a high-refractive index layer disposed on the p-GaN contact layer, the p-GaN contact layer being positioned above and below the p-AlGaN layer and the n-AlGaN layer, And a dispersion Bragg reflector in which an air layer is repeatedly laminated with a gallium nitride layer constituted by an upper dispersion Bragg reflector in which the low refractive index layers are alternately repeatedly laminated several times, and a method for manufacturing the same.