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Conductive Wafers for Detecting Open Faler with Increasing Contact Resistance During Wafer Probing and Methods of Measuring Them
Conductive Wafers for Detecting Open Faler with Increasing Contact Resistance During Wafer Probing and Methods of Measuring Them
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机译:用于在晶圆探测过程中检测接触电阻增加的开口晶体管的导电晶圆及其测量方法
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摘要
The present invention seeks a quick solution in case of problems caused by excessive contact resistance and operator error in EDS setup, and accurate wafer extraction to solve the design and process problems by maintaining accurate EDS test environment. It is to provide a conductive wafer for detecting open paler according to an increase in contact resistance and a method for measuring the same, and to probe a conductive wafer coated with a conductive material such as aluminum on a bare wafer at a thickness of about 3 μm when an open phenomenon occurs in a mass production wafer. By checking whether the current path is open, and determining whether there is an abnormality in the current path from the mass production wafer and the tester to the wafer according to whether the open phenomenon occurs.
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