首页> 外国专利> Conductive Wafers for Detecting Open Faler with Increasing Contact Resistance During Wafer Probing and Methods of Measuring Them

Conductive Wafers for Detecting Open Faler with Increasing Contact Resistance During Wafer Probing and Methods of Measuring Them

机译:用于在晶圆探测过程中检测接触电阻增加的开口晶体管的导电晶圆及其测量方法

摘要

The present invention seeks a quick solution in case of problems caused by excessive contact resistance and operator error in EDS setup, and accurate wafer extraction to solve the design and process problems by maintaining accurate EDS test environment. It is to provide a conductive wafer for detecting open paler according to an increase in contact resistance and a method for measuring the same, and to probe a conductive wafer coated with a conductive material such as aluminum on a bare wafer at a thickness of about 3 μm when an open phenomenon occurs in a mass production wafer. By checking whether the current path is open, and determining whether there is an abnormality in the current path from the mass production wafer and the tester to the wafer according to whether the open phenomenon occurs.
机译:本发明寻求在EDS设置中由过度的接触电阻和操作者错误引起的问题的情况下的快速解决方案,以及通过保持准确的EDS测试环境来精确地提取晶片以解决设计和工艺问题的方法。本发明提供一种用于根据接触电阻的增加来检测开孔的导电晶片及其测量方法,并且在厚度约为3埃的裸晶片上探测涂覆有诸如铝的导电材料的导电晶片。批量生产晶圆中发生开路现象时的微米。通过检查电流路径是否断开,并根据是否发生断开现象来确定从批量生产晶片和测试器到晶片的电流路径中是否存在异常。

著录项

  • 公开/公告号KR19990016653A

    专利类型

  • 公开/公告日1999-03-15

    原文格式PDF

  • 申请/专利权人 윤종용;

    申请/专利号KR19970039269

  • 发明设计人 권순철;

    申请日1997-08-19

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 02:17:48

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