the semiconductor chip is connected with the voltage range and the side of the metal oxide semiconductor field effect transistor is don't command it on - insulator device

摘要

SOI (Semiconductor - on - the Insulator) to the semiconductor board, and board on the fill type insulation layer and insulation layer on each side. the side of the MOSFET includes. MOSFET backfill type insulating layer is on the semiconductor surface including the semiconductor layer, and the surface layer of the first conductive type source region, a first conductive type and second conductive type opposite the channel region, the channel of the back section of the insulated gate electrode and the second conductive type horizontal the drift region in the drift region, the channel region from the lateral direction, and the first to challenge you to be the drain region.the first conductive type semiconductor region is connected to the channel region and the drift region between the semiconductor surface layer to provide, through the essence of the invention, the source area is ideal for the drift region of the electric connection. the device of the n channel is for the manufacture and the related technology of thin SOI voltage using voltage p channel transistor to provide a MOS especially useful.