REFLECTION TYPE PHASE SHIFTING MASK, TRANSMITTANCE TYPE PHASE SHIFTING MASK AND THE METHOD FOR FORMING PATTERN

摘要

The present invention provides a reflective phase shift mask suitable for exposure of a pattern by forming reflected light having a phase difference by reflection of light, a substrate reflecting exposure light, a phase shift film formed on a part of the substrate, and the substrate and the phase shift. A reflection type phase shift mask having a phototransmitter formed on a film and having a film thickness of the phase shift film set so that a phase difference between the light reflected from the substrate and the light reflected from the phase shift film is 180 degrees.