METHOD OF MANUFACTURING SOI WAFER HAVING A MULTI-LAYER STRUCTURE BY SILICON WAFER JUNCTION AT LOW TEMPERATURE AND SOI WAFER MANUFACTURED BY THIS METHOD

摘要

The present invention is the first step of outer diameter processing and cutting the silicon single crystal rod, mirror-polished only one side of the cut silicon wafer, the second step of forming an insulating oxide film only on one of the two wafers, vacuum at room temperature or special A third step of bonding silicon under a gas atmosphere, a fourth step of heat-treating and mirror-polishing two bonded silicon wafers, and polishing, etching, and mirror-polishing the opposite surface of the bonded surface on the wafer on which the insulated oxide film is formed. Provided are a method of manufacturing an SOI wafer, which is performed by steps including a fifth process, and an SOI wafer manufactured by the method.