NONVOLATILE SEMICONDUCTOR DEVICE HAVING A METAL-INSULATOR-SEMICONDUCTOR GATE STRUCTURE

摘要

SUMMARY OF THE INVENTION An object of the present invention is to realize a low voltage, low power consumption, and an increase in the number of operations of a write erase operation in a semiconductor nonvolatile memory device, and to improve the performance of a nonvolatile semiconductor memory device such as a flash memory. It is done.;In a MIS type semiconductor nonvolatile memory device, among the gate insulating films formed of two insulating films of the first insulating film and the second insulating film, the second insulating film is formed of a high dielectric constant film and the composition of the high dielectric constant film is continuously or non-volatile. It is continuously changed or silicon fine particles are formed between the first insulating film and the second insulating film.