COPOLUMER FOR MATRIX RESIN OF CHEMICAL AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND THE CHEMICAL AMPLIFIED PHOTORESIST COMPOSITION CONTAINING THE SAME

摘要

The present invention relates to a copolymer having a repeating unit represented by the following general formula (I) and a chemically amplified positive photoresist composition composed of the copolymer and a photoacid generator.;Here, l, m, and n are numbers representing repeating units, respectively, 0.1 ≦ L / m + n ≦ 0.5, 0 ≦ m / L + n ≦ 0.5, and 0 ≦ n / L + m ≦ 0.9.;The present invention improves the etching resistance by introducing an alicyclic chain to a polyacrylate derivative having low light absorption at 193 nm, improved adhesion by introducing a monomer having a hydroxyl group introduced therein, and the concentration of the developer during development. It could be developed without changing it. Therefore, according to the present invention, a chemically amplified resist was prepared by preparing a copolymer which was easily synthesized, and then a resist pattern having excellent high resolution and etching resistance regardless of the type of substrate.