首页> 外国专利> PHASE SHIFT MASK, METHOD OF MANUFACTURING A PHASE SHIFT MASK AND METHOD OF FORMING A PATTERN WITH PHASE SHIFT MASK

PHASE SHIFT MASK, METHOD OF MANUFACTURING A PHASE SHIFT MASK AND METHOD OF FORMING A PATTERN WITH PHASE SHIFT MASK

机译:相移面罩,制造相移面罩的方法以及用相移面罩形成图案的方法

摘要

With a small number of masks, a hole pattern is formed with high precision at a fine pitch in the positive photoresist using a simple exposure apparatus.;A first light transmitting region, and the surface of the transparent substrate 1 is exposed in the Ta 1, a second light transmitting region, and in the Ta 2 a semi-light-shielding film is formed on the surface of the transparent substrate 1, and the third light transmission The groove 1a is formed in the surface of the transparent substrate 1 in the region Tn 1 , and the semi-shielding film 3 and the phase shifter layer (on the surface of the transparent substrate 1 in the fourth light transmission region Ta 2 ) 5) is laminated and formed, and in the light shielding area S, the semi-shielding film 3, the phase shifter layer 5, and the light shielding film 7 are laminated on the surface of the transparent substrate 1.
机译:使用少量的掩模,使用简单的曝光装置在正型光刻胶中以微小的间距高精度地形成孔图案。第一透光区域,并且透明基板1的表面在Ta < Sub> 1,第二透光区域,并且在Ta 2 中,在透明基板1的表面上形成半遮光膜,第三透光在透明基板 1 的表面上的区域Tn 1 中形成沟槽1a,并且半屏蔽膜3和移相器层(在该表面上)层叠并形成在第四透光区域Ta 2 )5)中的透明基板1,并且在遮光区域S中,半遮光膜3,移相器层5和光屏蔽膜7层压在透明基板1的表面上。

著录项

  • 公开/公告号KR100201039B1

    专利类型

  • 公开/公告日1999-06-15

    原文格式PDF

  • 申请/专利权人 MITSUBISHI DENKI KABUSHIKI KAISHA;

    申请/专利号KR19970003287

  • 发明设计人 나카오 슈지;

    申请日1997-02-03

  • 分类号G03F1/08;

  • 国家 KR

  • 入库时间 2022-08-22 02:15:49

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号