INDUCTOR DEVICE HAVING MOS TRANSISTOR USING MUTI-LAYER METAL INTERCONNECTION

摘要

1. The technical field to which the invention described in the claims belongs.;Inductor of semiconductor device.;2. The technical problem to be solved by the invention;The present invention is to reduce the increase in area by separately forming the inductor and the transistor, and by freely configuring the inductor in parallel or in series at each terminal of the MOS transistor.;3. Summary of Solution to Invention;The width of the active region of the MOS transistor in the structure of the inductor is W By forming n phosphor transistors and connecting them to any of the terminals of the inductor wiring and the MOS transistor using a multi-layer metal wiring process, any terminal of the inductor and the MOS transistor is connected in series and the channel width is W. n An inductor device with a morph transistor is implemented.;4. Important uses of the invention;Semiconductor device requiring an inductor.