首页>
外国专利>
PROCESS DETECTING IONIZING RADIATION, DETECTOR AND USE OF FIELD-EFFECT METAL-OXIDE-SEMICONDUCTOR TRANSISTOR IN IT
PROCESS DETECTING IONIZING RADIATION, DETECTOR AND USE OF FIELD-EFFECT METAL-OXIDE-SEMICONDUCTOR TRANSISTOR IN IT
展开▼
机译:过程检测中的电离辐射,检测器及其中场效应金属氧化物-半电子晶体管的使用
展开▼
页面导航
摘要
著录项
相似文献
摘要
FIELD: detection of ionizing radiation. SUBSTANCE: uncovered section 17 is created on surface of floating gate of field-effect MOS transistor that forms detector. Field-effect MOS transistor is so used that charge is formed on its floating gate and this charge changes as result of ionizing radiation to which transistor is subjected. Radiation dose is determined by change that takes places in charge on gate. For increase of sensitivity and expansion of range of measured doses when ionizing radiation is detected there is provided possibility of exertion of effect of radiation on surface of floating gate 13 of field-effect MOS transistor 10 through air or gas space. EFFECT: increased sensitivity of detector and expanded range of measured doses of ionizing radiation. 13 cl, 7 dwg
展开▼