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Wafer planarization involves developing for almost complete photoresist layer removal above highest peaks

机译:晶圆平面化涉及在最高峰以上进行几乎完全光刻胶层去除的显影

摘要

A silicon wafer is planarized by uniformly exposing an applied photoresist layer (4), developing to remove almost the entire photoresist layer above the highest wafer surface peaks (5) and then plasma-chemical back-etching. Preferred Feature: The photoresist viscosity is such that a spin-on or other coating process produces a layer thickness (d) of two to four times the maximum height difference (h) of the wafer surface.
机译:通过均匀地曝光所施加的光致抗蚀剂层(4),显影以去除最高晶圆表面峰(5)上方的几乎整个光致抗蚀剂层,然后进行等离子体化学反蚀刻,来对硅晶片进行平面化。优选特征:光致抗蚀剂粘度使得旋涂或其他涂覆工艺产生的层厚度(d)是晶片表面的最大高度差(h)的2-4倍。

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