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Optical emission procedure and device for the final point detection of plasma etching processes

机译:用于等离子体蚀刻工艺终点检测的光发射程序和装置

摘要

The device monitors the optical emission intensity of the plasma in a narrow band centred about a predetermined spectral line. It generates a first signal indicative of the spectral intensity of the etch product series. The device further monitors the optical emission intensity of the plasma in a wide band and generates a second signal indicative of the spectral intensity of the continuum plasma emission. The device further monitors the magnitudes of the first and second signals and generates a termination signal when the magnitudes diverge.
机译:该设备在以预定光谱线为中心的窄带中监视等离子体的光发射强度。它产生指示蚀刻产物系列的光谱强度的第一信号。该设备还监视宽带中等离子体的光发射强度,并生成指示连续等离子体发射光谱强度的第二信号。该设备还监视第一和第二信号的幅度,并在幅度发散时生成终止信号。

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