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Method and apparatus for optical emission end point detection in plasma etching processes

机译:用于等离子体蚀刻工艺中的光发射终点检测的方法和设备

摘要

An apparatus and method for determining the time at which a plasma etching process should be terminated. The process generates at least one etch product species and a continuum plasma emission. The apparatus monitors the optical emission intensity of the plasma in a narrow band centered about a predetermined spectral line and generates a first signal indicative of the spectral intensity of the etch product species. The apparatus further monitors the optical emission intensity of the plasma in a wide band and generates a second signal indicative of the spectral intensity of the continuum plasma emission. The apparatus further monitors the magnitudes of the first and second signals and generates a termination signal when the magnitudes diverge.
机译:用于确定应终止等离子体蚀刻工艺的时间的设备和方法。该过程产生至少一种蚀刻产物种类和连续的等离子体发射。该设备在以预定光谱线为中心的窄带中监视等离子体的光发射强度,并生成指示蚀刻产物种类的光谱强度的第一信号。该设备还监视宽带中等离子体的光发射强度,并产生指示连续等离子体发射的光谱强度的第二信号。该设备还监视第一和第二信号的幅度,并且当幅度发散时产生终止信号。

著录项

  • 公开/公告号EP0604344B1

    专利类型

  • 公开/公告日1999-01-20

    原文格式PDF

  • 申请/专利权人 IBM;

    申请/专利号EP19930480195

  • 申请日1993-11-19

  • 分类号H01J37/32;

  • 国家 EP

  • 入库时间 2022-08-22 02:20:21

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