A method for the pretreatment of aluminum surfaces of a vapor deposition chamber upstream of the application of a tungsten silicide - layer on a substrate in the chamber

摘要

PURPOSE: To prevent the occurrence of particulates in a deposition chamber and to obtain high quality tungsten silicide coatings on substrates processed first after cleaning the chamber by subjecting surfaces in the chamber including surfaces of susceptors, etc., having the aluminum nitride surfaces to specified pretreatment. ;CONSTITUTION: After a previous cleaning step, a vacuum deposition chamber is pretreated as follows; a gas contg. a gaseous tungsten feed source such as WF₆ and gaseous silane (SiH₄) is allowed to flow into the chamber to form a 1st tungsten silicide deposition on aluminum-bearing surfaces in the chamber and then a gas contg. the gaseous tungsten feed source and a gaseous chlorosilane such as dichlorosilane, monochlorosilane or trichlorosilane is allowed to flow into the chamber to form a 2nd tungsten silicide deposition on the 1st tungsten silicide deposition.;COPYRIGHT: (C)1995,JPO