Method of attack of the slices of semi conducting -.

摘要

The electrochemical stop etching is favorably carried out by the application of any voltage without permitting current that is caused by aluminum remainder to leak and avoiding short-circuits between the low-resistance layer in the scribe region and the isolation. In a method of producing semiconductor devices relying upon the electrochemical stop etching, major circuits are constituted and ground aluminum wirings 5 are formed on at least one surface of a substrate 7, and their peripheries are surrounded by scribe regions to form a plurality of chip patterns 1. On the same surface of the substrate 7 where chip patterns 1 are formed, aluminum wirings 3 for etching are formed via a field oxide film 10 while maintaining a predetermined gap relative to the GND aluminum wirings and maintaining an equal height and surrounding the chip patterns 1 in the scribe regions. The neighboring aluminum wirings 3 for etching are electrically connected together among the chip patterns 1 that neighbor one another, and a predetermined voltage is applied to the aluminum wirings 3 for etching to effect the electrochemical stop etching.