首页> 外国专利> An arrangement for biasing the gate of a transistor in the low noise amplifier of a receiver to protect the transistor from an excessive input

An arrangement for biasing the gate of a transistor in the low noise amplifier of a receiver to protect the transistor from an excessive input

机译:一种用于在接收器的低噪声放大器中对晶体管的栅极进行偏置以保护晶体管免受过多输入影响的装置

摘要

A circuit for controlling a low-noise amplifier having a low-noise transistor as an amplifying device, includes a bias voltage controller (5) (fig 1) decreasing a voltage to be applied to a gate of the transistor down to a voltage equal to or smaller than a pinch-off voltage to thereby pinch-off the low-noise amplifier (3), while power to be provided to the low-noise amplifier (3) is inhibited. Even if an excessive input signal is input into the low-noise amplifier while the low-noise amplifier is not in operation, gate current does not flow through the transistor constituting the low-noise amplifier. Hence, it is possible to minimise the likelihood that the device will be destroyed.
机译:一种用于控制具有低噪声晶体管作为放大装置的低噪声放大器的电路,包括偏置电压控制器(5)(图1),该偏置电压控制器将要施加到晶体管栅极的电压降低到等于小于或小于夹断电压从而夹断低噪声放大器(3),同时禁止提供给低噪声放大器(3)的功率。即使在低噪声放大器不工作时将过多的输入信号输入到低噪声放大器中,栅极电流也不会流过构成低噪声放大器的晶体管。因此,可以使设备被破坏的可能性最小化。

著录项

  • 公开/公告号GB2335558A

    专利类型

  • 公开/公告日1999-09-22

    原文格式PDF

  • 申请/专利权人 * NEC CORPORATION;

    申请/专利号GB19990006290

  • 发明设计人 AKIHIRO * KIRISAWA;

    申请日1999-03-18

  • 分类号H03F1/52;

  • 国家 GB

  • 入库时间 2022-08-22 02:09:54

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号