MASK STRUCTURE, EXPOSURE METHOD AND EXPOSURE DEVICE USING THIS MASK STRUCTURE, SEMICONDUCTOR DEVICE MANUFACTURED BY USING THIS MASK STRUCTURE AND PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make the life of a mask longer by preventing the contamination of a mask surface by deposits, dust, etc., and decreasing or eliminating the number of times of washing. ;SOLUTION: The X-ray mask structure consists of a holding frame 1 which consists of Si having a thickness of 0.625 mm and SiC of 2.0 μm in thickness which constitutes an X-ray permeable supporting film 2 and is deposited by CVD. A thin film of titanium oxide 6 is formed at a thickness of 200 nm as a photocatalyst on the supporting film 2 by resistance heating vapor deposition or EB vapor deposition. The deposition conditions for the titanium oxide 6 are so regulated that a crystal type turns to an anatase type. The mask structure further comprises an X-ray absorber 3 consisting of Ta formed by sputtering and a reinforcing body 4 consisting of 'Pyrex (R)' adhered to the holding frame 1 by anode joining. Further, the opposite side of the mask surface is provided with a pellicle 8 to prevent the direct adhesion of dust, etc., on the mask, by which the number of washing times of the mask is decreased or the need for washing the mask itself is eliminated and the longer life of the mask may be achieved.;COPYRIGHT: (C)2000,JPO