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The device production method null of using the mask and the said mask which are produced mask production method and the production device, and making use of

机译:使用制造的掩模制造方法及制造装置的掩模及上述掩模,并利用装置制造方法

摘要

A method of manufacturing a mask in which laser radiation is projected to a mask substrate of silicon and a supporting frame of heat resisting glass, while a voltage of about 1000-10000 V is applied between the mask substrate and the supporting frame. Cooling water is caused to flow to suppress temperature rise due to the irradiation, to maintain the mask substrate and the supporting frame at a predetermined normal temperature (about the mask temperature in a lithographic pattern transfer process). The light projecting step is performed for a period not shorter than 10 minutes whereby anodic bonding of the mask substrate with the supporting frame is achieved. This prevents a shift of the mask pattern and/or deformation of the mask substrate, and it assures the manufacture of a high precision mask.
机译:一种制造掩模的方法,其中将激光辐射投射到硅的掩模基板和耐热玻璃的支撑框架上,同时在掩模基板和支撑框架之间施加大约1000-10000 V的电压。使冷却水流动以抑制由于照射引起的温度升高,以将掩模基板和支撑框架维持在预定的常温(大约为光刻图案转印工艺中的掩模温度)。进行光投射步骤不少于10分钟的时间,由此实现掩模基板与支撑框架的阳极结合。这防止了掩模图案的偏移和/或掩模基板的变形,并且确保了高精度掩模的制造。

著录项

  • 公开/公告号JP3083037B2

    专利类型

  • 公开/公告日2000-09-04

    原文格式PDF

  • 申请/专利权人 キヤノン株式会社;

    申请/专利号JP19940007621

  • 发明设计人 宮地 剛司;前原 広;赤池 正剛;

    申请日1994-01-27

  • 分类号H01L21/027;G03F1/16;

  • 国家 JP

  • 入库时间 2022-08-22 02:03:55

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