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PRODUCTION METHOD FOR MASK BLANK-USE TRANSLUCENT SUBSTRATE, PRODUCTION METHOD FOR MASK BLANK, PRODUCTION METHOD FOR EXPOSING MASK, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR LIQUID CRYSTAL DISPLAY UNIT, AND METHOD OF CORRECTING DEFECT IN EXPOSING MASK
PRODUCTION METHOD FOR MASK BLANK-USE TRANSLUCENT SUBSTRATE, PRODUCTION METHOD FOR MASK BLANK, PRODUCTION METHOD FOR EXPOSING MASK, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR LIQUID CRYSTAL DISPLAY UNIT, AND METHOD OF CORRECTING DEFECT IN EXPOSING MASK
A mask blank-use translucent substrate that corrects a recessed defect in the translucent substrate surface to prevent the occurrence of a transfer pattern defect and a mask patter defect, production methods for a mask blank and an exposing mask, and a method of correcting a defect in an exposing mask. An exposing mask having mask patterns (2) as transfer patterns formed on a translucent substrate (1), wherein the surrounding portion of a recessed defect (3), in a substrate surface (1a) where a mask pattern (2) is not formed, that causes a reduction in transmitted light quantity leading to a transfer pattern defect is removed by a needle-like member (4), and a correction is made so as to reduce the step difference between the substrate surface and the recessed defect depth. Such a recessed defect is corrected before the stage of forming a mask pattern-forming thin film on the translucent substrate. The recessed defect-corrected translucent substrate is used to produce a mask blank and an exposing mask.
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