CMP POLISHING PAD AND CMP PROCESSING DEVICE USING IT

摘要

PROBLEM TO BE SOLVED: To accomplish plural kinds of polishing states by a CMP polishing pad. ;SOLUTION: First polishing portions 41 and second polishing portions 42 are dispersely disposed on a pad surface of a polishing pad 3 respectively. The first polishing portions 41 are larger than the second polishing portions 42 and the second polishing portions 42 are higher than the first polishing portions 41. The second polishing portions 42 are constituted by an elastic body 42A and an abrasive grain fixed thereon. A corresponding elastic body is not provided on the first polishing portions 41. Thereby, two kinds of states, i.e., a state that a polishing is carried out by both first and second polishing portions 41, 42 and a state that a polishing is carried out only by the second polishing portions 42 can be realized by adjusting an urging force of the polishing pad 3 to a subject to be polished (semiconductor wafer, etc.).;COPYRIGHT: (C)2000,JPO