GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND GaN- BASED SEMICONDUCTOR PHOTODETECTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a GaN-based light-emitting element excellent in light emitting characteristic by improving the structure of a light leading-out side electrode, and obtain a GaN-based photodetecting element excellent in light receiving characteristic by improving the structure of a light-fetching side electrode.;SOLUTION: The forming pattern of upper electrodes P1 has a repetition part, where covered regions in which the upper surface of a contact layer S3 is covered the electrode P1 and exposed regions in which the upper surface of the layer 3 is not covered but exposed, are alternately arranged. In the repetition part, a width of the covered region is W, a width of the exposed region is G, a depth from the upper surface of the contact layer S3 to a light-emitting layer S2 is (d), refractive index of the contact layer is n1, and refractive index of the outside is n2. In this case, W≤10 μm, W≤2G, and G≤dxtanθ1 (where θ1=sin-1(n2/n1)) are satisfied. Furthermore, other various kinds of modes are imparted to the upper electrode.;COPYRIGHT: (C)2000,JPO