HIGH-BREAKDOWN VOLTAGE FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD, AND/OR MANUFACTURE OF SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To increase the breakdown voltage of a semiconductor device without increasing the number of processes, and to provide an HVMOS that can be mixedly mounted, a semiconductor device using it, and its manufacturing method. ;SOLUTION: On an n-epitaxial layer 1, p field relaxation layer and p-well layer 2 and 3, and n-well layers 4 and 5 are formed simultaneously. Then, a LOCOS oxide film 6 is formed, and p low-concentration diffusion layers 7 and 8 are formed simultaneously. A gate oxide film 9 and a gate polysilicon film 10 are formed successively, and a sidewall 11 is used for simultaneously forming an n-source/drain region 12 and an n-well region 13, and p-source/drain regions 14 and 15. Finally, a first interlayer insulating film 16 is formed, source/drain electrodes 17, 18, and 19 are formed simultaneously, and a second interlayer insulation 20 and a second drain electrode 21 are formed successively. The source electrode 18 is formed, while the source electrode covers the entire gate polysilicon film 10, and the second drain electrode 21 is formed so as to overlap with the end of the source electrode 18.;COPYRIGHT: (C)2000,JPO