首页> 外国专利> METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE, COMPUTER READABLE RECORDING MEDIUM HAVING CONTROL PROGRAM FOR SEMICONDUCTOR MANUFACTURING SYSTEM RECORDED THEREON AND DATA RECORDING MEDIUM USED FOR CONTROLLING SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM

METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE, COMPUTER READABLE RECORDING MEDIUM HAVING CONTROL PROGRAM FOR SEMICONDUCTOR MANUFACTURING SYSTEM RECORDED THEREON AND DATA RECORDING MEDIUM USED FOR CONTROLLING SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM

机译:制造半导体装置的方法和系统,用于记录其的半导体制造系统的计算机可读记录介质控制程序以及用于控制半导体装置制造系统的数据记录介质

摘要

PROBLEM TO BE SOLVED: To manufacture a microminiaturized semiconductor device without narrowing the control range of a manufacturing apparatus by linking a manufacturing condition described as a function of a process name of control with a measurement result to form a new manufacturing condition.;SOLUTION: First, a manufacturing flow wherein manufacturing process names and preceding measuring process names are arranged in the processing order, is made in a flow making part 20. Then, a manufacturing condition described as a function of a process name of a preceding measurement is set as a manufacturing process name in a link information setting part 21. Continuously, a preceding measurement result is linked with a manufacturing condition described as a function of a process name of a preceding measurement to form a new manufacturing condition in a manufacturing condition forming part 22. Further, a manufacture parameter is calculated from the new manufacturing condition according to the measurement result in a manufacture parameter calculating part 23. Then, a semiconductor device is manufactured in a manufacturing apparatus group 7 by using the manufacture parameter.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:在不缩小制造设备的控制范围的情况下,通过将根据控制过程名称描述的制造条件与测量结果联系起来以形成新的制造条件,来制造微型半导体器件。然后,在流程制作部20中进行制造流程,在该流程中,按照处理顺序排列了制造工序名称和在先的测量工序名称。然后,将根据在先测量的工序名称来描述的制造条件设定为链接信息设置部分21中的制造过程名称。连续地,先前的测量结果与根据先前测量的过程名称描述的制造条件相关联,以在制造条件形成部分22中形成新的制造条件。 ,根据新的制造条件,根据测量结果在制造参数计算部分23中。然后,通过使用制造参数在制造装置组7中制造半导体器件。COPYRIGHT:(C)2000,JPO

著录项

  • 公开/公告号JP2000182917A

    专利类型

  • 公开/公告日2000-06-30

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP19980356713

  • 发明设计人 HARAKAWA SHOICHI;

    申请日1998-12-15

  • 分类号H01L21/02;

  • 国家 JP

  • 入库时间 2022-08-22 01:59:08

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