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Device fabrication involving planarization

机译:涉及平面化的器件制造

摘要

Planarization of geometrically difficult semiconductor device surfaces is accomplished utilizing a coating technique in which on an object with a flat surface is used to planarize the coating material.;In particular, device processing is accomplished by including a step that produces a planar surface by coating a nonplanar surface with a material that has a viscosity of less than 1000 cp. An object with a flat surface is placed into contact with the material in such a manner that the material is planarized to a desired degree. The material is cured while in contact with the object's flat surface. The object is then separated from the material. The planarity of the planarizing material is then transferred into the underlying layer using conventional techniques.
机译:几何上困难的半导体器件表面的平面化是利用涂层技术完成的,该技术是在具有平坦表面的物体上对涂层材料进行平面化;特别是,器件处理是通过包括以下步骤来完成的:非平面表面,其材料的粘度小于1000 cp。使具有平坦表面的物体与材料接触,使得材料被平面化至所需程度。与对象的平面接触时,该材料会固化。然后将对象与材料分离。然后使用常规技术将平坦化材料的平坦度转移到下面的层中。

著录项

  • 公开/公告号EP0683511B1

    专利类型

  • 公开/公告日2000-02-23

    原文格式PDF

  • 申请/专利权人 AT & T CORP;

    申请/专利号EP19950303160

  • 发明设计人 PRYBYLA JUDITH ANN;TAYLOR GARY NEWTON;

    申请日1995-05-10

  • 分类号H01L21/3105;H01L21/312;

  • 国家 EP

  • 入库时间 2022-08-22 01:49:02

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