首页>
外国专利>
USE OF OBLIQUE IMPLANTATION IN FORMING BASE OF BIPOLAR TRANSISTOR
USE OF OBLIQUE IMPLANTATION IN FORMING BASE OF BIPOLAR TRANSISTOR
展开▼
机译:斜注入法在双极晶体管成形基础中的应用
展开▼
页面导航
摘要
著录项
相似文献
摘要
In fabricating a bipolar transistor, semiconductor dopant is introduced into a semiconductor body during a base doping operation to define a doped region, part of which constitutes a base region for the transistor. The base doping operation entails ion implanting the dopant into the body at a tilt angle of at least 15 DEG relative to the vertical. The minimum lateral base thickness and, when the base region abuts a slanted sidewall of a field insulating region, the minimum sidewall base thickness increase relative to the minimum vertical base thickness. As a result, the magnitude of the collector-to-emitter breakdown voltage typically increases. The minimum lateral, sidewall, and vertical base thicknesses vary with the tilt angle and base-implant energy in such a manner that the minimum lateral base thickness and the minimum sidewall base thickness are separately controllable from the minimum vertical base thickness.
展开▼