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Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases

机译：具有外延和离子注入基极的双极晶体管的集电极电流的温度依赖性

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Ashburn P; Boussetta H; Hashim M D R; Chantre A; Mouis M; Vincent G; Parker G J;
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年度 1996
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正文语种 en
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1. Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base–Collector Voltage Drop at Low Current [J] . Bangbing Shi, Shiwei Feng, Yamin Zhang, IEEE Transactions on Power Electronics . 2019,第10期

机译：利用低电流下的基极-集电极压降测量SiC双极结型晶体管的结温的方法
2. On the bipolar transistor collector current at the onset of base-widening as a function of the collector-base voltage [J] . S. Karmalkar Solid-State Electronics . 2003,第6期

机译：在双极型晶体管上，基极加宽开始时的集电极电流是集电极-基极电压的函数
3. Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si/sub 1-x/Ge/sub x/, and ion implanted bases [J] . Ashburn P., Boussetta H. IEEE Transactions on Electron Devices . 1996,第5期

机译：用电学测定带外延Si，外延Si / sub 1-x / Ge / sub x /和离子注入基极的双极晶体管中的带隙变窄
4. Unified Model for Bipolar Transistors Including the Voltage and Current Dependence of the Base and Collector Resistances as Well as the Breakdown Limits [C] . Hebert F., Roulston D.J. Solid State Device Research Conference, 1988. ESSDERC '88 . 1988

机译：双极晶体管的统一模型，包括基极和集电极电阻的电压和电流相关性以及击穿极限
5. Reduction of base-collector capacitance in gallium arsenide/aluminum gallium arsenide heterojunction bipolar transistors by ion implantation and MOCVD regrowth [D] . Chang, Ping-Chih 1997

机译：通过离子注入和MOCVD再生长来降低砷化镓/砷化镓铝异质结双极晶体管的基极-集电极电容
6. Temperature dependence of electron density and electron-electroninteractions in monolayer epitaxial graphene grown on SiC [O] . Chieh-Wen Liu, Chiashain Chuang, Yanfei Yang, -1

机译：电子密度和电子电子的温度依赖性SiC上生长的单层外延石墨烯中的相互作用
7. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers [O] . Bruce, SPO, Vandamme, LKJ Lodewijk = Lode, Rydberg, A Anders 1999

机译：使用跨阻放大器测量SiGe异质结双极晶体管中的低频基极和集电极电流噪声和相干性

Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases

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