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Defect induced buried oxide (dibox) for throughput SOI
Defect induced buried oxide (dibox) for throughput SOI
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机译:缺陷诱导的埋层氧化物(dibox),用于吞吐量SOI
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摘要
A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing a first low energy implantation step to create a stable defect region; a second low energy implantation step to create an amorphous layer adjacent to the stable defect region; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising said semiconductor substrate having said DIBOX is also provided herein.
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