-- DEFECT INDUCED BURIED OXIDE DIBOX FOR THROUGHPUT SOI

摘要

A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate of the present invention comprises: a first low energy implantation step to create a stable defect region; A second low energy implantation step of creating an amorphous layer adjacent to the stable defect region; An oxidation step and optionally an annealing step are used. Also provided in the present invention is a silicon-on-insulator (SOI) material comprising the semiconductor substrate with the DIBOX.