PRECURSOR SOLUTION FOR CHEMICAL VAPOR DEPOSITION OF COPPER FILM AND ITS PREPARING METHOD

摘要

For the present invention using a kind of method for manufacturing the precursor solution on silicon substrate, this method has excellent copper wiring film, and the sheet resistance in resistivity and the wiring material to semiconductor devices are moved to electronics vapor deposition electronically. The solution of ion method and its solution and the method for depositing copper film on a silicon substrate, the present invention is dissolved in following formula (1), lewis base is defined by formula (2) to formula (5), the formula (5) is lower than the metal complex defined by the lewis acid of formula (6), or abrasion precursor solution, wherein copper foil increase is dissolved in the chemical substance in lewis base and lewis acidic mixed solution, and provides the method for producing the chemical substance. ;1 & gt of formula; ;In formula 1, R is selected from hydrogen (H), fluorine (F) or alkyl, perfluoroalkyl with 1 to 4 (perfluoroalkyl), perfiuoroaryl (perfiuoroaryl), R 1 and R 2 is carbon atom, each carbon atom is independently 1 to 7, alkyl or perfluoroalkyl, it is the alkene that following formula (2) indicate that L, which is defined as lewis base,, for that can provide the organic or organo-metallic compound of unshared electron pair to copper metal center (alkene), formula (3) alkynyl to be marked (alkynes) is selected from silane (silane) or silane for it. The NE indicated by the general formula (5) that following general formula (4) indicate. ;2 & gt of formula; ;(R 3) (R 4) C=C(R 5) (R 6);In the above-mentioned formula (2) of R 3, R 4, R 5 and R 6, each is identical or means other hydrogen (H), fluorine (F) or alkyl, perfluoroalkyl or alkoxy (alkoxy) with 1 to 6 carbon atom. ;3 & gt of formula; ;R 7 Cr Cr 8;In equation 3, the respective identical or different expression hydrogen (H) of R 7 and R 8 or alkyl, perfluoroalkyl or alkoxy, have 1 to 6 carbon atom. ;4 & gt of formula; ;(R 9) (R 10) C=CH-(CHR 11) N- Si(or 12) 3;In the above-mentioned formula (4) of R 9, R 10, R 11 and R 12, R 10, R 11 and R 12 are respectively identical or mean other hydrogen (H), fluorine (F) or alkyl or with 1 to 4 carbon atom, the perfluorinated alkyl that n is 0-3. It indicates integer. ;5 & gt of formula; ;(R 10) C ε-(CHR 11) N- Si(or 12) 3;In formula 5, R 10, R 11 and R 12 are individually identical or different hydrogen (H), it refers to that fluorine (F) or alkyl with 1 to 4 carbon atoms or perfluorinated alkyl, n indicate 0 to 3do integer. ;6 & gt of formula; ;In 6 R of formula, R 1 and R 2 in public formula (I) R, R 1 and R 2 it is identical.