METHOD FOR DOPING IMPURITY TO POLY CRYSTALLINE SILICONE FILM

摘要

PURPOSE: A method for doping an impurity to a poly crystalline silicone film is to equally maintain a sheet resistance of the poly crystalline silicone, thereby optimally maintaining a conductivity of a wire. CONSTITUTION: A method for doping an impurity to a poly crystalline silicone film comprises a step of supplying a phosphine gas as a source gas of phosphorus in a vertical furnace type equipment of which a chamber is maintained at a temperature of about 800 deg. C, and implanting n type impurity into a poly crystalline silicone film. In the method, the chamber is formed of a single or double quartz tube(20,30). The temperature in the chamber is maintained in an extent of 700 to 1000 deg. C. A pressure in the chamber is maintained in an extent of 100 to 3000 m Torr.