SEMICONDUCTOR MEMORY DEVICE HAVING COLLECTIVE WRITING MODE FOR WRITING DATA ON ROW BASIS

摘要

According to the present invention, there is provided a semiconductor memory device capable of batch writing on a row basis and having a small layout area.;In the DRAM column decoder 4.1, an OR gate 17 for receiving the test signal TE1 and the output of the column decoder unit circuit 16 is provided corresponding to each column select line CSL. When the test signal TE1 is at the "H" level, which is the activation level, all the column select lines CSL are at the "H" level, and all the column select gates CSG1 and CSG2 are turned on to enable batch writing on a row basis. Since it is not necessary to provide a circuit for batch writing separately, the layout area is small.