Plasma unit for controlling etching, sputtering off or structuring surfaces and/or generating of surface coatings; controls plasma intensity within given time over substrate and varies substrate voltage over given time

摘要

At least one plasma source (10) and at least one substrate (11) are in a vacuum chamber (13). The source (10) produces plasma (16) interacting with the substrate (11) to which a corresponding voltage is applied. First devices are provided, which control plasma intensity varying over a given time on the substrate (11). Second devices are provided which vary the substrate voltage over a given time.