Ohmic contact, especially for p-type gallium nitride, e.g. in LEDs, laser diodes, photodetectors and microelectronic components, is produced by metal thermal oxidation to form a p-type semiconductor oxide

摘要

An ohmic contact is produced by metal thermal oxidation on a semiconductor material to form a p-type semiconductor oxide. Independent claims are also included for the following: (i) an ohmic contact to a semiconductor comprising a mixture of p-type semiconductor oxide and metal; and (ii) an ohmic contact to a semiconductor comprising a p-type semiconductor oxide layer and a conductive layer. Preferred Features: The semiconductor material is p-AlxGayInxN (x, y, z = 0 to 1 exclusive and x + y + z = 1) and the p-type semiconductor oxide is NiO, MnO, FeO, Fe2O3, CoO, CrO, Cr2O3, CrO2, CuO, Cu2O, SnO, Ag2O, CuAlO2, SrCu2O2, LaMnO3, YBa2Cu4O8 or PdO.