Metal - - - structure of the connecting contact with a small contact resistance and a low loss via gear as well as a method for producing the same.

摘要

It is a metal - - - structure of the connecting contact with a small contact resistance and a low loss via gear proposed for use in integrated circuits. The contact - structure comprises a connecting - layer of dielectric material on the surface of a semiconductor substrate of an integrated circuit. The connecting - layer of dielectric material has a contact opening, which extend up to a predetermined area of the semiconductor substrate, for example, a source - zone, a drain - zone or a polysilicon - gate layer. The contact - structure further comprises a cobalt silicide or a nickel silicide boundary layer on the surface of the specified range, the with the base surface of the contact opening is aligned. Moreover, it comprises a cobalt - or a nickel adhesive layer on the surface of the side walls of the contact opening, a high melting, based on metal barrier layer on the metal adhesive layer and the metal - silicide boundary layer and a conductive terminating element. The present invention also relates to the manufacturing process for such a contact - structure.