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Semiconductor housing substrate, especially a power semiconductor chip carrier substrate, comprises an aluminum silicon carbide body bearing an aluminum nitride layer and an aluminum outer layer
Semiconductor housing substrate, especially a power semiconductor chip carrier substrate, comprises an aluminum silicon carbide body bearing an aluminum nitride layer and an aluminum outer layer
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机译:半导体壳体衬底,特别是功率半导体芯片载体衬底,包括带有氮化铝层和铝外层的铝碳化硅本体
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摘要
A semiconductor housing substrate, comprising an AlSiC body (116) bearing an AlN layer (114) and an aluminum top layer (112), is new. Independent claims are also included for the following: (i) a semiconductor component housing assembly comprising the above substrate; and (ii) a process for producing the above substrate by depositing an AlN layer on the top surface of a porous SiC body, encapsulating the body in a pure aluminum casing, flowing aluminum from the capsule into interstitial sites of the SiC body to form AlSiC, and subdividing the remaining aluminum layer into sub-regions isolated by the AlN layer.
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