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Manifold systems and methods for delivering samples of microelectronic device processing gases to gas analyzers

机译:用于将微电子器件处理气体样品输送到气体分析仪的歧管系统和方法

摘要

Manifold systems and methods for delivering samples of microelectronic device processing gases to gas analyzers include a first passage that receives microelectronic device processing gas from a gas source and discharges the gas at a set pressure through a second passage to a selected gas analyzer. A third passage supplies low-pressure cleaning gas to clean the first and second passages. Multiple gas sources can be connected to multiple gas analyzers via a single manifold system. Steps for distributing semiconductor device processing gas from a gas source to a gas analyzer include purging the first and second passages with low- pressure cleaning gas to remove contaminants. After removing the low- pressure gas from the first and second passages, the first and second passages are isolated from each other and a semiconductor processing gas is discharged from a gas source into the isolated first passage. The semiconductor processing gas is discharged from the first passage to the gas analyzer at a predetermined flow rate and pressure via the second passage. After the semiconductor processing gas has been discharged from the first passage to the gas analyzer, the second passage is isolated from the gas analyzer. Semiconductor processing gas remaining within the first and second passages is then removed. The first and second passages are then purged with high- pressure cleaning gas to remove contaminants.
机译:用于将微电子器件处理气体的样本输送到气体分析仪的歧管系统和方法包括第一通道,该第一通道从气体源接收微电子器件处理气体,并以设定的压力将气体通过第二通道排放到选定的气体分析仪。第三通道供应低压清洁气体以清洁第一和第二通道。多个气体源可以通过单个歧管系统连接到多个气体分析仪。用于将半导体器件处理气体从气体源分配到气体分析仪的步骤包括用低压清洁气体吹扫第一通道和第二通道以去除污染物。从第一通道和第二通道除去低压气体之后,第一通道和第二通道彼此隔离,并且半导体处理气体从气体源排放到隔离的第一通道中。半导体处理气体以预定的流量和压力通过第二通道从第一通道排放到气体分析仪。在半导体处理气体从第一通道排放到气体分析仪之后,第二通道与气体分析仪隔离。然后去除残留在第一和第二通道内的半导体处理气体。然后用高压清洁气体吹扫第一和第二通道以去除污染物。

著录项

  • 公开/公告号US5996420A

    专利类型

  • 公开/公告日1999-12-07

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US19980034578

  • 发明设计人 SOK-HO LEE;

    申请日1998-03-04

  • 分类号G01N1/00;G01N30/04;

  • 国家 US

  • 入库时间 2022-08-22 01:38:53

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