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MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region
MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region
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机译:MOS型半导体器件具有在沟道区中具有不均匀杂质浓度分布的杂质扩散层
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摘要
A semiconductor device of the invention is formed so that the impurity concentration of a semiconductor substrate under a source diffusion layer is lower than the impurity concentration on a source side of a p-type impurity layer. Therefore, in the semiconductor device of the invention, the junction capacitance of the p-n junction between the source and the substrate is smaller as compared with a conventional LDC structure. In general, the speed of a device is proportional to the product obtained by multiplying together a load capacitance and an inverse of a current value of the device. Accordingly, in the case of applying the present invention to a circuit such as a NAND type CMOS circuit in which a voltage is applied to a region between the source and the substrate, the speed of the device is not decreased. On the other hand, the power consumption of a device is proportional to the product obtained by multiplying together a load capacitance and the square of an applied voltage. Consequently, according to the present invention, a semiconductor device which can be operated at a low power consumption is realized.
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