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Integrated circuit configuration for driving a power MOSFET with a load on the source side
Integrated circuit configuration for driving a power MOSFET with a load on the source side
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机译:用于在源极侧负载驱动功率MOSFET的集成电路配置
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摘要
Field-effect-controllable power semiconductor components with a source- connected load are made conducting via a control circuit with an integrated charge pump. When a generator connected to the source side is in operation, then the source potential becomes higher than the drain potential. A parasitic diode therefore carries current in the control circuit. That current turns on a parasitic bipolar transistor that limits the gate potential to a value that is no longer sufficient for making the power semiconductor component conducting. This effect is prevented by connecting a further diode in antiseries with the parasitic diode.
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